The outstanding hardness and wear resistance of diamond materials pose significant challenges in their grinding processes for semiconductor substrate materials. To overcome this, a mechanochemical effect-based approach is used, which employs a grinding wheel comprising titanium (Ti)-coated diamond abrasives. A uniform Ti coating is vacuum-evaporated onto micrometer-scale diamond abrasives. The coating layer forms a diamond-TiC-Ti structure extending from the diamond matrix to the Ti coating direction. The material removal rate (MRR) of the DF is significantly increased as a result of the protruding active Ti coating on the diamond abrasives reacting with the DF at the interface contact locations. Increasing the grinding speed from 300 rpm to 700 rpm under a fixed grinding pressure of 300 N results in an MRR increment from 32 nm/min to 913 nm/min. Similarly, maintaining a grinding speed of 600 rpm while increasing the grinding pressure from 300 N to 600 N leads to an MRR increase from 388 nm/min to 1662 nm/min. The primary mechanism behind material removal is the reaction between the Ti coating and the DF, as well as the graphitization of the DF.