Maintaining high carrier mobility has been more difficult as field-effect transistors (FETs) continue to shrink into the nanoscale zone because of increased surface scattering, interface traps, and dielectric instabilities. This review examines how carbon-based nanomaterials such as graphene and carbon nanotubes (CNTs) and 2D nanomaterials including hBN, can act as "nanoscale lubricants" to mitigate these issues. These materials offer exceptional electrical, thermal, and mechanical properties that help reduce interfacial resistance and phonon scattering, ultimately enhancing carrier transport. We examine their electrical and structural properties, compatibility with conventional CMOS methods, and integration techniques such as direct growth, transfer printing, and chemical vapour deposition (CVD). The review also evaluates various FET architectures, including back-gated, top-gated, and gate-all-around designs, with a focus on interface engineering and electrostatic control. Additionally, we address the impact of flaws, grain boundaries, and chemical functionalization on device performance and reliability, providing quantitative insights on mobility advances. Importantly, the Tribology at the nanoscale not only deals with frictional energy dissipation but also with phonon scattering, defect formation, and surface energy landscape, which directly influence carrier mobility in FETs. Overall, our research shows that carbon-based and 2D nanomaterials including hBN hold promises for resolving significant issues with nanoscale FETs and providing a feasible route to more effective and scalable nanoelectronics devices.